Precision at the Nanometer Scale

Fiber Photonic Solutions for the Semiconductor Industry

Advanced semiconductor manufacturing relies on tightly controlled processes where microscopic variations directly impact device yields and chip performance. Optical laser sources and amplifiers must deliver consistent beam quality, ultra-stable pulse energy, and narrow spectral linewidths while operating in demanding production environments characterized by high optical power, strict contamination control, and exposure to temperature fluctuations and process chemicals. Robust and reliable optical performance is essential to support stable operations, maximize yield, and ensure long-term process consistency.

Typical Applications

  • Lithography systems
  • Wafer inspection and metrology
  • Plasma etching processes
  • Thin-film deposition systems
  • Process monitoring and control
  • High-precision optical sensing in semiconductor equipment
  • Wafer Dicing / Scribing
  • Mask Repair
  • EUV/DUV Metrology Light Sources / Seeding

What Sets Our Lasers Apart

Ampliconyx laser solutions combine exceptional beam quality (M² ≈ 1), high pulse stability, and scalable output power to meet the rigorous demands of semiconductor manufacturing. By inherently suppressing nonlinear optical effects (SRS/SPM) through our patented T-DCF technology, our laser systems deliver high peak powers and narrow spectral linewidths required for wafer inspection, lithography, precision scribing, and advanced process monitoring.

Recommended Products for Semiconductor Processing

Green Picosecond Laser AMPX-PICO-532/100/1

Key Specs:

  • Average Output Power/Pulse Energy: 1W /1.5 µJ(customisable)
  • Central Wavelength: Choice of 520 nm or 532 nm (customisable)
  • Spectral Bandwith: 0.1nm FWHM at 1 μJ pulse energy
  • Pulse Duration: Typically ~70 ps (customisable)
  • Key Advantage: Patented Tapered Double-Clad Fiber Technology for minimal spectral line broadening and high stability.

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AMPX Gain Module TGM

Key Specs:

  • Average Output Power: Up to 650 W
  • Peak Power: Up to 2 MW
  • Beam Quality (M²): Typically 1.2 (M² < 1.4)
  • Slope Efficiency: ~ 75 %
  • Key Advantage: Ytterbium-doped T-DCF technology and dual pumping for high-power ultrafast pulse amplification with excellent beam quality and suppressed ASE

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FAQ – Frequently Asked Questions

Semiconductor processing requires highly stable and reliable optical performance under high power, contamination-control requirements, temperature fluctuations, and exposure to process chemicals to ensure consistent production quality and yield.

The laser minimizes spectral line broadening and ensures stable, vibration-insensitive operation through its patented Tapered Double-Clad Fiber Technology and full-fiber design.

Key specifications include picosecond pulse durations (~70 ps), excellent beam quality (M² ≈ 1), narrow spectral bandwidth (0.1 nm), and high temporal and spectral resolution.